RAMAVATHU SAKRU NAIK

New rapid synthesis developed for bilayer graphene and high-performance transistors  Uc Santa Barbara researchers demonstrate ultra-fast and deterministic growth of high-quality and large-area bilayer graphene films with controlled stacking order required for low-power digital electronics. Researchers at University of California, Santa Barbara, in collaboration with Rice University, have recently demonstrated a rapid synthesis technique for large-area Bernal (or AB) stacked bilayer graphene films that can open up new pathways for digital electronics and transparent conductor applications. The invention also includes the first demonstration of a bilayer graphene double-gate field-effect transistor (FET), showing record ON/OFF transistor switching ratio and carrier mobility that could drive future ultra-low power and low-cost electronics. Graphene is the thinnest known (~0.5 nanometer per layer) 2-dimensional atomic crystal. It has attracted wide interest due t...

COMPUTER is the World Most Revolutionary Technology ..... 

William Shockley Founds Shockley Semiconductor 1955 William Shockley, co-inventor of the transistor seven years earlier, founds Shockley Semiconductor Laboratories in Santa Clara Valley. He recruits 12 young scientists dedicated to the use of germanium and silicon for transistors -- his "Ph.D. production line." Shockley wins the Nobel Prize¨ for Physics in 1956, but his management style and disenchantment with pure research causes the eight young scientists to leave company. The "Traitorous Eight" Develop A Method Of Mass Producing Silicon Transistors 1957 Gordon E. Moore, C. Sheldon Roberts, Eugene Kleiner, Robert N. Noyce, Victor H. Grinich, Julius Blank, Jean A. Hoerni and Jay T. Last—the "Traitorous Eight" from Shockley Semiconductor—use $3500 of their own money to develop a method of mass-producing silicon transistors using a double diffusion technique and a chemical-etching system. The silicon and germanium mesa allows manufacturers to...